Gain reduction measurements in transient stimulated Raman scattering
نویسندگان
چکیده
منابع مشابه
Transient stimulated Raman scattering in gas mixtures.
We studied, for the first time to our knowledge, transient stimulated Raman scattering in H(2)- D(2) and H(2)- CH(4) gas mixtures excited with 200-fs and 2-ps, 390-nm pulses. Depending on the composition and partial pressure, of those gases, we observed approximately 40 output lines simultaneously. Under optimum conditions a conversion efficiency of as much as 8% in the combination Raman line a...
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We have measured the vibrational Raman spectrum of a 1.2-microm-thick polystyrene film by using this film as an optical waveguide in a waveguide-stimulated Raman gain experiment. A gain factor of 1.3% was measured for the strong benzene mode at 1002 cm(-1). This value is in reasonable agreement with theoretical predictions.
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The stimulated Raman gain effect in planar dielectric waveguides is analyzed for the study of thin layers. Calculations show high gain factors and predict the possibility of detecting monolayers. Compared with those for methods based on ref lection, the gain can be 4 orders of magnitude higher for a monolayer of benzene. It is concluded that waveguide stimulated Raman gain spectroscopy is a pro...
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In our recent Letter 1 a numerical error was introduced in the calculation of the gain G 0. The values of the gain G 0 given in Figs. 2 and 3 should be multiplied by a factor of 5 to yield the correct values. Since this results in a gain that is even larger than that given in the Letter, it by no means alters the discussed ideas and conclusions.
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The transition between the transient and the stationary regimes of stimulated Raman scattering is examined computationally for pulses with a sharp initial rise. We find that the transient-regime predictions are useful for times less than T2 regardless of the pulse duration and that the stationary-regime predictions become useful only for times much greater than T2 . © 1996 Optical Society of Am...
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ژورنال
عنوان ژورنال: IEEE Journal of Quantum Electronics
سال: 1995
ISSN: 0018-9197
DOI: 10.1109/3.348067